PORTFOLIO PRESS RELEASE
FLOSFIA: Corundum structured gallium oxide successfully fabricated “corundum structure iridium oxide” having a lattice constant difference of 0.3% which can be used as a p-layer of a power semiconductor.
FLOSFIA, in collaboration with Kyoto University, Professor Fujita Shizuo and Assistant Professor Kentaro Kaneko, reported that “Corundum structure iridium oxide (α – Ir 2 O 3 (α – Ir 2 O 3)”) having a lattice constant difference of 0.3%, which can be used as a p layer of a corundum structure gallium oxide ) ” was successfully produced.
This achievement is an epoch-making in finding a way to realize ultralow-loss, low-cost normally-off type power transistor using corundum structure gallium oxide (α-Ga 2 O 3).
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