- Toshimi Hitora
Next Generation Power Devices from Gallium Oxide by MIST EPITAXY
FLOSFIA INC. is a pioneer in the development of next generation wide band gap power devices. Due to their proprietary Mist-CVD and all corundum structured Gallium Oxide based single crystal sapphire, FLOSFIA will achieve industry's-first, high breakdown voltage, high efficiency power devices with functional cost parity in silicon power devices.
The founder of Flosfia discovered a new corundum crystal material by using the technology from Fujita Shizuo Laboratory of Kyoto University. He then joined hands with Kyoto University members to lead the commercialization of product.
Flosfia’s core technology lies in Corundum type gallium oxide fabricated by the Mist CVD technology from Kyoto University. It allows them to make high performance and high-quality metal oxide films at a significantly lower cost through non-vacuum depositions. Gallium oxide is a material with an overwhelming potential as a power device, the company develops ahead of the world.
UTEC value up
UTEC leveraged its experience of investing in several tech companies and mentored Flosfia by providing business acceleration. UTEC continues to advice and cooperates with the company on various aspects of research and development, team building, and capital policy.
4 inch gallium oxide single crystal wafer
Proprietary α-Ga2O3 SBD