PORTFOLIO

PORTFOLIO COMPANIES

FLOSFIA INC.

  • Representative:
    Toshimi Hitora

URL:http://flosfia.com

COMPANY PROFILE

Next Generation Power Devices from Gallium Oxide by MIST EPITAXY

FLOSFIA INC. is a pioneer in the development of next generation wide band gap power devices. Due to their proprietary Mist-CVD and all corundum structured Gallium Oxide based single crystal sapphire, FLOSFIA will achieve industry's-first, high breakdown voltage, high efficiency power devices with functional cost parity in silicon power devices.

COMPANY STORY

Origin

One of the founders discovered a new corundum crystal material at the Fujita Shizuo Laboratory, Kyoto University. Kyoto University students joined the team and it led to the commercialization of the product.

Strength

The strength of the semiconductor technology lies in the mist CVD method from Kyoto University and corundum type gallium oxide. Mist CVD method is a breakthrough in semiconductor fabrication as it allows us to make high performance and high quality metal oxide films at a significantly lower cost through non-vacuum depositions.

UTEC value up

Business acceleration by using UTEC's know-how of other successful companies case and passing on the insights on various issues such as research and development, personnel structure, capital policy and other issues.
  • 4 inch gallium oxide single crystal wafer

  • Proprietary α-Ga2O3 SBD

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