- Toshimi Hitora
Next-generation Power Devices from Gallium Oxide by MIST EPITAXY
FLOSFIA INC. is a pioneer in the development of next-generation wide-band power devices. Due to their proprietary Mist-CVD and all corundum structured Gallium Oxide based single crystal sapphire, Flosfia can achieve the industry's first high breakdown voltage, high-efficiency power devices with functional cost parity in silicon power devices.
Flosfia’s founder discovered a new corundum crystal material by using the technology from the Fujita Shizuo Laboratory of Kyoto University. He then collaborated with Kyoto University members to lead the product commercialization.
Flosfia’s core technology lies in Corundum type gallium oxide fabricated by the Mist CVD technology from Kyoto University. It allows Flosfia to make high performance and high-quality metal oxide films at a significantly lower cost through non-vacuum depositions. The company is a world leading developer of gallium oxide and its innovative applications in power devices.
UTEC’s value add
UTEC leveraged its experience of investing in several tech companies, and mentored Flosfia by supporting their business acceleration strategies. UTEC continues to advise and cooperate with the company in various aspects of research and development, team building, and capital policy.
4 inch gallium oxide single crystal wafer
Proprietary α-Ga2O3 SBD