- Toshimi Hitora
Next Generation Power Devices from Gallium Oxide by MIST EPITAXY
FLOSFIA INC. is a pioneer in the development of next generation wide band gap power devices. Due to their proprietary Mist-CVD and all corundum structured Gallium Oxide based single crystal sapphire, FLOSFIA will achieve industry's-first, high breakdown voltage, high efficiency power devices with functional cost parity in silicon power devices.
One of the founders discovered a new corundum crystal material at the Fujita Shizuo Laboratory, Kyoto University. Kyoto University students joined the team and it led to the commercialization of the product.
The strength of the semiconductor technology lies in the mist CVD method from Kyoto University and corundum type gallium oxide. Mist CVD method is a breakthrough in semiconductor fabrication as it allows us to make high performance and high quality metal oxide films at a significantly lower cost through non-vacuum depositions.
UTEC value up
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4 inch gallium oxide single crystal wafer
Proprietary α-Ga2O3 SBD